Effect ofp-njunction overheating on degradation of silicon high-power pulsed IMPATT diodes
A. E. Belyaev, V. V. Basanets, N. S. Boltovets, A. V. Zorenko, L. M. Kapitanchuk, V. P. Kladko, R. V. Konakova, N. V. Kolesnik, T. V. Korostinskaya, T. V. Kritskaya, Ya. Ya. Kudryk, A. V. Kuchuk, V. VТом:
45
Мова:
english
Сторінки:
7
DOI:
10.1134/s1063782611020047
Date:
February, 2011
Файл:
PDF, 927 KB
english, 2011