[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - GaN-based bidirectional Super HFETs Using polarization junction concept on insulator substrate
Nakajima, Akira, Unni, Vineet, Menon, Kalyani G., Dhyani, Mahesh H., Sankara Narayanan, E. M., Sumida, Yasunobu, Kawai, HirojiРік:
2012
Мова:
english
Сторінки:
4
DOI:
10.1109/ispsd.2012.6229074
Файл:
PDF, 1.20 MB
english, 2012