Electrical transport properties of Ru/Cu/n-InP Schottky barrier diode based on temperature-dependentI–VandC–Vmeasurements
V. Lakshmi Devi, I. Jyothi, V. Rajagopal ReddyТом:
86
Мова:
english
Сторінки:
9
DOI:
10.1007/s12648-012-0118-y
Date:
August, 2012
Файл:
PDF, 723 KB
english, 2012