Corrigendum to “Defect-induced reversible ferromagnetism in Fe-doped ZnO semiconductor: An electronic structure and magnetization study” [Mater. Chem. Phys. 123 (2010) 678–684]
Arvind Samariya, R.K. Singhal, Sudhish Kumar, Y.T. Xing, Mariella Alzamora, S.N. Dolia, U.P. Deshpande, T. Shripathi, Elisa B. SaitovitchТом:
126
Рік:
2011
Мова:
english
DOI:
10.1016/j.matchemphys.2010.12.062
Файл:
PDF, 86 KB
english, 2011