Tl 2 Hg 3 Q 4 (Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors
Johnsen, Simon, Peter, Sebastian C., Nguyen, Sandy L., Song, Jung-Hwan, Jin, Hosub, Freeman, Arthur J., Kanatzidis, Mercouri G.Том:
23
Мова:
english
Журнал:
Chemistry of Materials
DOI:
10.1021/cm2019857
Date:
October, 2011
Файл:
PDF, 4.84 MB
english, 2011