444.9ânm semipolar (1122) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
Shan Hsu, Po, Hardy, Matthew T., Wu, Feng, Koslow, Ingrid, Young, Erin C., Romanov, Alexey E., Fujito, Kenji, Feezell, Daniel F., DenBaars, Steven P., Speck, James S., Nakamura, ShujiТом:
100
Рік:
2012
Мова:
english
Журнал:
Applied Physics Letters
DOI:
10.1063/1.3675850
Файл:
PDF, 1.45 MB
english, 2012