Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering
AlarcoÌn-LladoÌ, Esther, Bin-Dolmanan, Surani, Lin, Vivian Kai Xin, Teo, Siew Lang, Dadgar, Armin, Krost, Alois, Tripathy, SudhiranjanТом:
108
Рік:
2010
Мова:
english
Журнал:
Journal of Applied Physics
DOI:
10.1063/1.3505780
Файл:
PDF, 928 KB
english, 2010