PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- $\hbox{SiN}_{x}$ Stressing Layer
Liao, Wen-Shiang, Liaw, Yue-Gie, Tang, Mao-Chyuan, Chen, Kun-Ming, Huang, Sheng-Yi, Peng, C.-Y., Liu, Chee WeeТом:
29
Мова:
english
Журнал:
IEEE Electron Device Letters
DOI:
10.1109/LED.2007.910794
Date:
January, 2008
Файл:
PDF, 355 KB
english, 2008
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