Facile Charge-Displacement at Silicon Gives Spaced-out Reaction
Ebrahimi, Maryam, Huang, Kai, Lu, Xuekun, McNab, Iain R., Polanyi, John C., Waqar, Zafar, Yang, Jody (S. Y.), Lin, Haiping, Hofer, Werner A.Том:
133
Мова:
english
Журнал:
Journal of the American Chemical Society
DOI:
10.1021/ja205716t
Date:
October, 2011
Файл:
PDF, 3.80 MB
english, 2011