Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics
Van Hove, Marleen, Kang, Xuanwu, Stoffels, Steve, Wellekens, Dirk, Ronchi, Nicolo, Venegas, Rafael, Geens, Karen, Decoutere, StefaanТом:
60
Мова:
english
Журнал:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2013.2274730
Date:
October, 2013
Файл:
PDF, 2.92 MB
english, 2013