Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm
Bezotosnyi, V. V., Oleshenko, V. A., Cheshev, E. A.Том:
48
Мова:
english
Журнал:
Semiconductors
DOI:
10.1134/S1063782614010059
Date:
January, 2014
Файл:
PDF, 216 KB
english, 2014
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