Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD
Kil, Yeon-Ho, Yang, Hyeon Deok, Yang, Jong-Han, Kang, Sukill, Jeong, Tae Soo, Choi, Chel-Jong, Kim, Taek Sung, Shim, Kyu-Hwan, Kim, Dae-JungТом:
64
Мова:
english
Журнал:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.64.443
Date:
February, 2014
Файл:
PDF, 519 KB
english, 2014
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