Dislocation behavior of surface-oxygen-concentration controlled Si wafers
Asazu, Hirotada, Takeuchi, Shotaro, Sannai, Hiroya, Sudo, Haruo, Araki, Koji, Nakamura, Yoshiaki, Izunome, Koji, Sakai, AkiraТом:
557
Мова:
english
Журнал:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.10.081
Date:
April, 2014
Файл:
PDF, 726 KB
english, 2014