Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs
Conrad, Nathan, Shin, SangHong, Gu, Jiangjiang, Si, Mengwei, Wu, Heng, Masuduzzaman, Muhammad, Alam, Mohammad A., Ye, Peide D.Том:
13
Мова:
english
Журнал:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2013.2283854
Date:
December, 2013
Файл:
PDF, 891 KB
english, 2013
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