Effect of nitrogen impurity on the stabilization of 3C–SiC polytype during heteroepitaxial growth by vapor–liquid–solid mechanism on 6H–SiC substrates
Lorenzzi, Jean, Souliere, Veronique, Carole, Davy, Jegenyes, Nikoletta, Kim-Hak, Olivier, Cauwet, François, Ferro, GabrielТом:
20
Мова:
english
Журнал:
Diamond and Related Materials
DOI:
10.1016/j.diamond.2011.03.037
Date:
May, 2011
Файл:
PDF, 884 KB
english, 2011
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