[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process
Chwan-Ying Lee,, Cheng-Tyng Yen,, Kuan-Wei Chu,, Young-Shying Chen,, Chien-Chung Hung,, Lurng-Shehng Lee,, Tzu-Ming Yang,, Chiao-Shun Chuang,, Cheng-Chin Huang,, Ming-Jinn Tsai,Рік:
2013
Мова:
english
DOI:
10.1109/ISPSD.2013.6694473
Файл:
PDF, 1.24 MB
english, 2013
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