Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
Lü, Yuan-Jie, Feng, Zhi-Hong, Lin, Zhao-Jun, Gu, Guo-Dong, Dun, Shao-Bo, Yin, Jia-Yun, Han, Ting-Ting, Cai, Shu-JunТом:
23
Мова:
english
Журнал:
Chinese Physics B
DOI:
10.1088/1674-1056/23/2/027101
Date:
February, 2014
Файл:
PDF, 270 KB
english, 2014