Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure
Cao, Wen-Yu, He, Yong-Fa, Chen, Zhao, Yang, Wei, Du, Wei-Min, Hu, Xiao-DongТом:
22
Мова:
english
Журнал:
Chinese Physics B
DOI:
10.1088/1674-1056/22/7/076803
Date:
July, 2013
Файл:
PDF, 288 KB
english, 2013