[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - 5 nm gate length Nanowire-FETs and planar UTB-FETs with pure germanium source/drain stressors and laser-free Melt-Enhanced Dopant (MeltED) diffusion and activation technique
Tsung-Yang Liow,, Kian-Ming Tan,, Lee, Rinus T. P., Ming Zhu,, Tan, Ben L.-H., Samudra, Ganesh S., Balasubramanian, N., Yee-Chia Yeo,Рік:
2008
Мова:
english
DOI:
10.1109/VLSIT.2008.4588554
Файл:
PDF, 1.13 MB
english, 2008
File converter
Більше результатів пошуку
More benefits 
