Analysis of Abnormal Upturns in Capacitance–Voltage Characteristics for MOS Devices With High-$k$ Dielectrics
Sohn, Chang-Woo, Sagong, Hyun Chul, Jeong, Eui-Young, Choi, Do-Young, Park, Min Sang, Lee, Jeong-Soo, Kang, Chang Yong, Jammy, Raj, Jeong, Yoon-HaТом:
32
Мова:
english
Журнал:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2108257
Date:
April, 2011
Файл:
PDF, 446 KB
english, 2011
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