[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - A better hot-carrier-induced degradation monitor for several typical device parameters of pMOSFET's
Zhang Jin-cheng,, Hao Yue,, Zhu Zhi-wei,Том:
2
Рік:
2001
Мова:
english
DOI:
10.1109/icsict.2001.982069
Файл:
PDF, 247 KB
english, 2001
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