[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Suppression of NBTI-induced VMIN shifts using hafnium doping to gate poly/SiON interface and optimized NiPt process for 40nm node SRAM cell
Kitamura, Y., Sanuki, T., Matsuo, K., Shimizu, T., Ohta, A., Arayashiki, Y., Fukui, H., Hoshino, T., Ueki, Y., Yasumoto, A., Yoshimura, H., Asami, T., Oyamatsu, H.Рік:
2010
Мова:
english
DOI:
10.1109/vlsit.2010.5556132
Файл:
PDF, 399 KB
english, 2010