[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - A novel p-channel NAND-type flash memory with 2-bit/cell operation and high programming throughput (<20 MB/sec)
Hang-Ting Lue,, Szu-Yu Wang,, Erh-Kun Lai,, Min-Ta Wu,, Ling-Wu Yang,, Kuang-Chao Chen,, Joseph Ku,, Kuang-Yeu Hsieh,, Liu, R., Chih-Yuan Lu,Рік:
2005
Мова:
english
DOI:
10.1109/iedm.2005.1609342
Файл:
PDF, 457 KB
english, 2005
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