[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Hot carrier generation and reliability of BT(body-tied)-fin type SRAM cell transistors (W/sub fin/=20~70nm)
Young Jomi Ahn,, Hye Jin Cho,, Hee Soo Kang,, Choong-Ho Lee,, Choi Lee,, Jac-man Yoon,, Tac Yong Kim,, Eno Suk Cho,, Suk-Kang Sung,, Donggun Park,, Kinam Kim,, Byung-Il Ryu,Рік:
2005
Мова:
english
DOI:
10.1109/relphy.2005.1493111
Файл:
PDF, 574 KB
english, 2005
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