[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - Suppressed soft-errors and highly reduced current for HfOX based unipolar RRAM by inserting AlOX layer
Yu-Sheng Chen,, Heng-Yuan Lee,, Pang-Shiu Chen,, Kan-Hsueh Tsai,, Tai-Yuan Wu,, Wei-Su Chen,, Chen-Han Tsai,, Pei-Yi Gu,, Yi-Ying Liao,, Chen, F., Chen-Hsin Lien,, Ming-Jinn Tsai,Рік:
2012
Мова:
english
DOI:
10.1109/vlsi-tsa.2012.6210100
Файл:
PDF, 671 KB
english, 2012
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