Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs
Wu, Shih-Chieh, Feng, Hsien-Tsung, Yu, Ming-Jiue, Wang, I-Ting, Hou, Tuo-HungТом:
34
Мова:
english
Журнал:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2278098
Date:
October, 2013
Файл:
PDF, 978 KB
english, 2013