[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - 100 nm gate length high performance/low power CMOS transistor structure
Ghani, T., Ahmed, S., Aminzadeh, P., Bielefeld, J., Charvat, P., Chu, C., Harper, M., Jacob, P., Jan, C., Kavalieros, J., Kenyon, C., Nagisetty, R., Packan, P., Sebastian, J., Taylor, M., Tsai, J., TyРік:
1999
Мова:
english
DOI:
10.1109/iedm.1999.824182
Файл:
PDF, 352 KB
english, 1999