[IEEE 2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologies (MNST) - Novosibirsk, Russia (2010.12.9-2010.12.11)] 2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologis (MNST) - Effect of substrate and doping profile parameters on characteristics of ion-implanted Schottky-barrier field-effect transistor (MESFET)
Konstantinovich, Shestakov AlexanderРік:
2010
Мова:
english
DOI:
10.1109/mnst.2010.5687145
Файл:
PDF, 2.06 MB
english, 2010