[IEEE 2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China (30 June 2001)] Proceedings 2001 IEEE Hong Kong Electron Devices Meeting (Cat. No.01TH8553) - Simulation of a lateral trench IGBT with p+ diverter having superior electrical characteristics
Ey Goo Kang,, Seung Hyun Moon,, Sangsig Kim,, Man Young Sung,Рік:
2001
Мова:
english
DOI:
10.1109/HKEDM.2001.946916
Файл:
PDF, 410 KB
english, 2001