Improved Channel Hot-Carrier Reliability in $p$-FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process
Cho, Moonju, Arimura, Hiroaki, Lee, Jae Woo, Kaczer, Ben, Veloso, Anabela, Boccardi, Guillaume, Ragnarsson, Lars-Ake, Kauerauf, Thomas, Horiguchi, Naoto, Groeseneken, GuidoТом:
14
Мова:
english
Журнал:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2013.2284794
Date:
March, 2014
Файл:
PDF, 992 KB
english, 2014
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