[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Low-frequency noise characteristics of 0.13 μ In/sub 0.65/GaAs p-HEMT under the influence of impact ionization induced hole current
Tae-Woo Kim,, Kimb, D.-H., In-Ho Kang,, Jeong-Hoon Kim,, Kwang-Seok Seo,, Jong-In Song,Рік:
2003
Мова:
english
DOI:
10.1109/isdrs.2003.1272051
Файл:
PDF, 113 KB
english, 2003
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