Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li, Marcon, Denis, Ronchi, Nicolo, Bakeroot, Benoit, You, Shuzhen, Stoffels, Steve, Van Hove, Marleen, Bisi, Davide, Meneghini, Matteo, Groeseneken, Guido, Decoutere, StefaanТом:
103
Мова:
english
Журнал:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.08.006
Date:
January, 2015
Файл:
PDF, 839 KB
english, 2015
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