$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
Heng Yuan Lee,, Pang-Shiu Chen,, Tai-Yuan Wu,, Yu Sheng Chen,, Chen, F., Ching-Chiun Wang,, Pei-Jer Tzeng,, Lin, C.H., Ming-Jinn Tsai,, Chenhsin Lien,Том:
30
Мова:
english
Журнал:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2021004
Date:
July, 2009
Файл:
PDF, 300 KB
english, 2009