Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments
Yu, Liangchun C., Dunne, Greg T., Matocha, Kevin S., Cheung, Kin P., Suehle, John S., Sheng, KuangТом:
10
Мова:
english
Журнал:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2010.2077295
Date:
December, 2010
Файл:
PDF, 1.04 MB
english, 2010