Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures
Fedoryshyn, Yuriy, Ostinelli, Olivier, Alt, Andreas, Pallin, Angel, Bolognesi, Colombo R.Том:
115
Мова:
english
Журнал:
Journal of Applied Physics
DOI:
10.1063/1.4863332
Date:
January, 2014
Файл:
PDF, 927 KB
english, 2014