Structural analysis of erbium sheet-doped GaAs grown by molecular-beam epitaxy, with ion channeling followed by Monte Carlo simulation
Nakata, Jyoji, Jourdan, Nicolas, Yamaguchi, Hiroshi, Takahei, Kenichiro, Yamamoto, Yasuich, Kido, YoshiakiТом:
77
Рік:
1995
Мова:
english
Журнал:
Journal of Applied Physics
DOI:
10.1063/1.358660
Файл:
PDF, 1.68 MB
english, 1995