[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Successful suppression of dielectric relaxation inherent to high-k NAND from both architecture and material points of view
Jun Fujiki,, Naoki Yasuda,, Ryota Fujitsuka,, Wataru Sakamoto,, Kouichi Muraoka,Рік:
2009
Мова:
english
DOI:
10.1109/iedm.2009.5424334
Файл:
PDF, 883 KB
english, 2009
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