[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - 30V High-side N-channel Lateral Trench MOSFET
Disney, Don, Chan, Wilson, Lam, Roy, Blattner, Robert, Ma, Steve, Seng, Wesley, Jun-Wei Chen,, Williams, Richard K.Рік:
2009
Мова:
english
DOI:
10.1109/ispsd.2009.5158068
Файл:
PDF, 598 KB
english, 2009