[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Multilevel storage characteristics in ZrO2-ReRAM brought about by ideal current limiter
Lian, Wen-Tai, Long, Shi-Bing, Lv, Hang-Bing, Liu, Qi, Li, Ying-Tao, Wang, Yan, Zhang, Sen, Dai, Yue-Hua, Chen, Jun-ning, Liu, MingРік:
2010
Мова:
english
DOI:
10.1109/icsict.2010.5667565
Файл:
PDF, 4.42 MB
english, 2010
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