Examination of hot-carrier stress induced degradation on fin field-effect transistor
Yang, Yi-Lin, Zhang, Wenqi, Yen, Tzu-Sung, Hong, Jia-Jian, Wong, Jie-Chen, Ku, Chao-Chen, Wu, Tai-Hsuan, Wang, Tzuo-Li, Li, Chien-Yi, Wu, Bing-Tze, Lin, Shih-Hung, Yeh, Wen-KuanТом:
104
Мова:
english
Журнал:
Applied Physics Letters
DOI:
10.1063/1.4866437
Date:
February, 2014
Файл:
PDF, 468 KB
english, 2014
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