[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Channel Hot-Carrier degradation characteristics and trap activities of high-k/metal gate nMOSFETs
Weichun Luo,, Hong Yang,, Wenwu Wang,, Hao Xu,, Shangqing Ren,, Bo Tang,, Zhaoyun Tang,, Jing Xu,, Jiang Yan,, Chao Zhao,, Dapeng Chen,, Tianchun Ye,Рік:
2013
DOI:
10.1109/ipfa.2013.6599248
Файл:
PDF, 469 KB
2013
File converter
Більше результатів пошуку
More benefits 
