[IEEE 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits - Singapore (8-12 July 2002)] Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) - Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide
Zhichun Wang,, Ackaert, J., Salm, C., De Backer, E., van den Bosch, G., Zawalski, W.Рік:
2002
Мова:
english
DOI:
10.1109/ipfa.2002.1025671
Файл:
PDF, 381 KB
english, 2002