[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A study on millisecond annealing (MSA) induced layout dependence for flash lamp annealing (FLA) and laser spike annealing (LSA) in multiple MSA scheme with 45 nm high-performance technology
Miyashita, T., Kubo, T., Kim, Y. S., Nishikawa, M., Tamura, Y., Mitani, J., Okuno, M., Tanaka, T., Suzuki, H., Sakata, T., Kodama, T., Itakura, T., Idani, N., Mori, T., Sambonsugi, Y., Shimizu, A., KuРік:
2009
Мова:
english
DOI:
10.1109/iedm.2009.5424429
Файл:
PDF, 615 KB
english, 2009