Integrated plasma equipment model for polysilicon etch profiles in an inductively coupled plasma reactor with subwafer and superwafer topography
Hoekstra, Robert J.Том:
15
Мова:
english
Журнал:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.580659
Date:
July, 1997
Файл:
PDF, 698 KB
english, 1997
File converter
Більше результатів пошуку
More benefits 
