Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF 4 plasma treatment
Park, Youngrak, Kim, Jungjin, Chang, Woojin, Jung, Dongyun, Bae, Sungbum, Mun, Jaekyung, Jun, Chi-Hoon, Ko, Sangchoon, Nam, EunsooТом:
212
Мова:
english
Журнал:
physica status solidi (a)
DOI:
10.1002/pssa.201431737
Date:
May, 2015
Файл:
PDF, 949 KB
english, 2015