Variation of Lateral Width Technique in SoI High-Voltage Lateral Double-Diffused Metal–Oxide–Semiconductor Transistors Using High-k Dielectric
Guo, Yufeng, Yao, Jiafei, Zhang, Bo, Lin, Hong, Zhang, ChangchunТом:
36
Мова:
english
Журнал:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2393913
Date:
March, 2015
Файл:
PDF, 365 KB
english, 2015