[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - The 65nm tunneling field effect transistor (TFET) 0.68μm/sup 2/ 6T memory cell and multi-V/sub th/ device
Nirschl, Th., Henzler, St., Fischer, J., Bargagli-Stoffi, A., Fulde, M., Sterkel, M., Teichmann, P., Schaper, U., Einfeld, J., Linnenbank, C., Sedlmeir, J., Weber, C., Heinrich, R., Ostermayr, M., OlbРік:
2005
Мова:
english
DOI:
10.1109/essder.2005.1546613
Файл:
PDF, 256 KB
english, 2005