The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses
Ma, Xiao-Hua, Jiao, Ying, Ma, Ping, He, Qiang, Ma, Ji-Gang, Zhang, Kai, Zhang, Hui-Long, Zhang, Jin-Cheng, Hao, YueТом:
20
Мова:
english
Журнал:
Chinese Physics B
DOI:
10.1088/1674-1056/20/12/127305
Date:
December, 2011
Файл:
PDF, 54 KB
english, 2011