AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient
Ha, Wei, Zhang, Jin-Cheng, Zhao, Sheng-Lei, Ge, Sha-Sha, Wen, Hui-Juan, Zhang, Chun-Fu, Ma, Xiao-Hua, Hao, YueТом:
30
Мова:
english
Журнал:
Chinese Physics Letters
DOI:
10.1088/0256-307X/30/12/127201
Date:
December, 2013
Файл:
PDF, 65 KB
english, 2013