Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness
Huang, Chuan-Xin, Li, Jun, Ding, Xing-Wei, Zhang, Jian-Hua, Jiang, Xue-Yin, Zhang, Zhi-LinТом:
83
Мова:
english
Журнал:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2015.02.043
Date:
July, 2015
Файл:
PDF, 1.31 MB
english, 2015
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